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| savantic semiconductor product specification silicon pnp power transistors 2SB1317 description with to-3pl package complement to type 2sd1975 wide area of safe operation high transition frequency f t optimum for the output stage of a hi-fi audio amplifier applications for high power amplification pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -180 v v ceo collector-emitter voltage open base -180 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i cm collector current-peak -25 a t a =25 3.5 p c collector power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pl) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1317 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-10a ;i b =-1a -2.5 v v be base-emitter on voltage i c =-8a ; v ce =-5v -1.8 v i cbo collector cut-off current v cb =-180v; i e =0 -50 a i ebo emitter cut-off current v eb =-3v; i c =0 -50 a h fe-1 dc current gain i c =-20ma ; v ce =-5v 20 h fe-2 dc current gain i c =-1a ; v ce =-5v 60 200 h fe-3 dc current gain i c =-8a ; v ce =-5v 20 f t transition frequency i c =-0.5a ; v ce =-5v;f=1mhz 20 mhz c ob collector output capacitance i e =0;f=1mhz;v cb =-10v 450 pf h fe-2 classifications q s p 60-120 80-160 100-200 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1317 package outline fig.2 outline dimensions (unindicated tolerance: 0.50 mm) savantic semiconductor product specification 4 silicon pnp power transistors 2SB1317 |
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